Почему нельзя верить RDS(on) с первой страницы даташита

2026-05-11

Почему нельзя верить RDS(on) с первой страницы даташита

Channel: Академия программирования электронных устройств (9120 subscribers)

Almost every candidate this batch is hashtag-spam Shorts or wordless "look at the lights" clips. This Russian-language video is the rare exception: a focused engineering explainer on a trap that catches real designers.

The premise is simple but important. When you select a power MOSFET, the front page of the datasheet advertises an attractively low RDS(on) — the on-state drain-source resistance that determines conduction losses. The problem: that headline number is measured under idealized conditions (often Vgs = 10 V, Tj = 25 °C, and a specific drain current). In a real switching converter, your gate drive may be lower, the junction is hot, and the current is higher — all of which can double or triple the actual RDS(on) compared to the marketing figure.

A good video on this topic walks through the supplementary curves later in the datasheet: RDS(on) vs. Vgs, RDS(on) vs. temperature (positive tempco — important for paralleling), and the typical-vs-maximum spread. Understanding these turns "pick the lowest RDS(on)" into a real thermal budget calculation, and helps explain why otherwise reasonable designs run hotter than the back-of-envelope math predicted.

Even if you don't read Russian, auto-translated captions handle technical content like this reasonably well, and the datasheet graphs shown on screen are universal.

Why watch: A practical look at why headline MOSFET RDS(on) numbers lie, and which datasheet curves you should actually be reading.

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